US Patent Issued to ENKRIS SEMICONDUCTOR on Sept. 1 for "Semiconductor structure and method for manufacturing the same" (Chinese Inventor)

पोस्टेड ऑन: 2026-09-01

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,218, issued on Sept. 1, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Semiconductor structure and method for manufacturing th... और पढ़ें

US Patent Issued to PROTERIAL on Sept. 1 for "Silicon carbide substrate having excellent flatness and low basal plane dislocation density" (Japanese Inventors)

पोस्टेड ऑन: 2026-09-01

Government News US Fed News Patentwipo

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,219, issued on Sept. 1, was assigned to PROTERIAL LTD. (Tokyo). "Silicon carbide substrate having excellent flatness and low basal plane di... और पढ़ें

US Patent Issued to SAMSUNG ELECTRONICS, Research & Business Foundation Sungkyunkwan University on Sept. 1 for "Semiconductor device comprising two-dimensional material and method of manufacturing the semiconductor device" (South Korean Inventors)

पोस्टेड ऑन: 2026-09-01

Government News US Fed News Patentwipo

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,220, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and Research & Business Foundation Sungkyunk... और पढ़ें

US Patent Issued to INNOSCIENCE (SUZHOU) SEMICONDUCTOR on Sept. 1 for "Semiconductor device including aluminum concentration that varies as an oscillating function and method for manufacturing the same" (Chinese Inventor)

पोस्टेड ऑन: 2026-09-01

Government News US Fed News Patentwipo

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,221, issued on Sept. 1, was assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR Co. LTD. (Suzhou City, China). "Semiconductor device including a... और पढ़ें

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Transistor gate structures and methods of forming the same" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-09-01

Government News US Fed News Patentwipo

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,222, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor gate structures and meth... और पढ़ें

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Fin field-effect transistor device and method" (Taiwanese Inventor)

पोस्टेड ऑन: 2026-09-01

Government News US Fed News Patentwipo

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,223, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Fin field-effect transistor device ... और पढ़ें

US Patent Issued to MIKRO MESA TECHNOLOGY on Sept. 1 for "Method of manufacturing structure having a metal layer including electrode and anodized segments through the use of patterned photoresist" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-09-01

Government News US Fed News Patentwipo

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,224, issued on Sept. 1, was assigned to MIKRO MESA TECHNOLOGY Co. LTD. (Apia, Samoa). "Method of manufacturing structure having a metal lay... और पढ़ें

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Semiconductor device and method" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-09-01

Government News US Fed News Patentwipo

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,225, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method" wa... और पढ़ें

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Method for forming semiconductor structure" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-09-01

Government News US Fed News Patentwipo

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,226, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method for forming semiconducto... और पढ़ें

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Method of forming a nano-FET semiconductor device having a spacer with a reducer seam" (Taiwanese Inventors)

पोस्टेड ऑन: 2026-09-01

Government News US Fed News Patentwipo

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,227, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method of forming a nano-FET semico... और पढ़ें

विशेष

Category

Source

Publication

Byline

Location

US Patent Issued to ENKRIS SEMICONDUCTOR on Sept. 1 for "Semiconductor structure and method for manufacturing the same" (Chinese Inventor)

US Patent Issued to PROTERIAL on Sept. 1 for "Silicon carbide substrate having excellent flatness and low basal plane dislocation density" (Japanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS, Research & Business Foundation Sungkyunkwan University on Sept. 1 for "Semiconductor device comprising two-dimensional material and method of manufacturing the semiconductor device" (South Korean Inventors)

US Patent Issued to INNOSCIENCE (SUZHOU) SEMICONDUCTOR on Sept. 1 for "Semiconductor device including aluminum concentration that varies as an oscillating function and method for manufacturing the same" (Chinese Inventor)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Transistor gate structures and methods of forming the same" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Fin field-effect transistor device and method" (Taiwanese Inventor)

US Patent Issued to MIKRO MESA TECHNOLOGY on Sept. 1 for "Method of manufacturing structure having a metal layer including electrode and anodized segments through the use of patterned photoresist" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Semiconductor device and method" (Taiwanese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Method for forming semiconductor structure" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Method of forming a nano-FET semiconductor device having a spacer with a reducer seam" (Taiwanese Inventors)